X-ray photoelectron spectroscopic study on sapphire nitridation for GaN growth by hydride vapor phase epitaxy: Nitridation mechanism

Journal of Applied Physics

Volumn 94, Issue 9, 2003, Pages 5656-5664

  Dwikusuma, F ^a   Kuech, T F ^a  

^a University of Wisconsin Madison   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL BONDS; DIFFUSION; NEGATIVE IONS; PARTIAL PRESSURE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SAPPHIRE; SUBSTITUTION REACTIONS; SURFACE ROUGHNESS; VAPOR PHASE EPITAXY; X RAY PHOTOELECTRON SPECTROSCOPY;

CHEMICAL BONDING STATES; NITRIDATION MECHANISM;

GALLIUM NITRIDE;

EID: 0242552125     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1618357     Document Type: Article

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