The surface treatment of sapphire substrate and its effects on the initial stage of GaN growth by MOVPE

Physica Status Solidi C: Conferences

Volumn , Issue 7, 2003, Pages 2163-2166

  Tsuda, M ^a,b   Watanabe, K ^a   Kamiyama, S ^b   Amano, H ^b   Akasaki, I ^b  

^a KYOCERA CORPORATION   (Japan)

^b MEIJO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; FLUORINE ATOMS; GROWTH OF GAN; HYDROGEN ANNEALING; INITIAL STAGES; PRE-TREATMENT; SAPPHIRE SUBSTRATES; SAPPHIRE SURFACE;

FLUORINE; GALLIUM NITRIDE; HYDROFLUORIC ACID;

SAPPHIRE;

EID: 6444237145     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200303364     Document Type: Conference Paper

References (4)

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4. M. Yoshimoto, T. Maeda, H. Ohnishi, and T. Koinuma, Appl. Phys. Lett. 67, 2615 (1995).