Evidence for lateral angle effect on single-event latchup in 65nm SRAMs

IEEE Transactions on Nuclear Science

Volumn 56, Issue 1, 2009, Pages 208-213

  Hutson, J M ^a   Pellish, J A ^a   Tipton, A D ^a   Boselli, G ^b   Xapsos, M A ^c   Kim, H ^c   Friendlich, M ^c   Campola, M ^c   Seidleck, S ^c   LaBel, K ^c   Marshall, A ^b   Deng, X ^b   Baumann, R ^b   Reed, R A ^a   Schrimpf, R D ^a   Weller, R A ^a   Massengill, L W ^a  

^a VANDERBILT UNIVERSITY   (United States)

^b TEXAS INSTRUMENTS   (United States)

^c NASA GODDARD SPACE FLIGHT CENTER   (United States)

Author keywords

65 nm; Azimuthal angle; Grazing angle; Lateral angle; Radiation effects; Single event latchup

Indexed keywords

RADIATION; STATIC RANDOM ACCESS STORAGE;

65 NM; AZIMUTHAL ANGLE; GRAZING ANGLE; LATERAL ANGLE; SINGLE EVENT LATCHUP;

RADIATION EFFECTS;

EID: 60449112795     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2008.2010395     Document Type: Article

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