Catastrophic latchup in CMOS analog-to-digital converters

IEEE Transactions on Nuclear Science

Volumn 48, Issue 6 I, 2001, Pages 1833-1840

  Miyahira, T F ^a   Johnston, A H ^a   Becker, H N ^a   LaLumondiere, S D ^b   Moss, S C ^b  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^b AEROSPACE CORPORATION   (United States)

Author keywords

Analog to digital converters (ADCs); Latchup; Radiation effects

Indexed keywords

CMOS INTEGRATED CIRCUITS; CURRENT DENSITY; ELECTRIC CHARGE; HEAVY IONS; INFRARED IMAGING; LASER PULSES; METALLIZING; SCANNING ELECTRON MICROSCOPY;

CURRENT DISTRIBUTIONS; LATCHUP;

ANALOG TO DIGITAL CONVERSION;

EID: 0035722189     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.983139     Document Type: Conference Paper

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