Analytical model of radiation induced or single event latchup in CMOS integrated circuits

IEEE Transactions on Nuclear Science

Volumn 53, Issue 4, 2006, Pages 1834-1838

  Useinov, R G ^a  

^a RESEARCH INSTITUTE OF SCIENTIFIC INSTRUMENTS   (Russian Federation)

Author keywords

Dynamic systems theory; Latchup; Threshold dose rate; Threshold LET for SEL

Indexed keywords

ELECTRIC POTENTIAL; MATHEMATICAL MODELS; RADIATION EFFECTS;

DYNAMIC SYSTEMS THEORY; LATCHUP; THRESHOLD DOSE RATE; THRESHOLD LET FOR SEL;

CMOS INTEGRATED CIRCUITS;

EID: 33748375585     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2006.878820     Document Type: Conference Paper

References (10)

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