The effects of angle of incidence and temperature on latchup in 65 nm technology

IEEE Transactions on Nuclear Science

Volumn 54, Issue 6, 2007, Pages 2541-2546

  Hutson, John M ^a,b   Pellish, Jonathan D ^a,b   Boselli, Gianluca ^a,c   Baumann, Robert ^a,c   Reed, Robert A ^a,b   Schrimpf, Ronald D ^a,b   Weller, Robert A ^a,b   Massengill, Lloyd W ^a,b  

^a IEEE   (United States)

^b VANDERBILT UNIVERSITY   (United States)

^c TEXAS INSTRUMENTS   (United States)

Author keywords

65 nm; Radiation effects; Single event latchup

Indexed keywords

ANGLE OF INCIDENCE; NEAR-GRAZING BEAM ANGLES; SINGLE EVENT LATCHUP;

ASPECT RATIO; RADIATION EFFECTS; SENSITIVITY ANALYSIS;

FLIP FLOP CIRCUITS;

EID: 37249016975     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2007.910330     Document Type: Conference Paper

References (31)

1. K. Kinoshita, C. T. Kleiner, and E. D. Johnson, "Radiation induced regeneration through the P-N junction in monolithic IC s," IEEE Trans. Nucl. Sci., vol. NS-12, no. 5, pp. 83-90, Oct. 1965.
2. K. Soliman and D. K. Nichols, "Latchup in CMOS from heavy ions," IEEE Trans. Nucl. Sci., vol. NS-30, no. 6, pp. 4514-4519, Dec. 1983.
3. W. A. Kolasinski, J. B. Blake, J. K. Anthony, W. E. Price, and E. C. Smith, "Simulation of cosmic-ray induced soft errors and latchup in integrated-circuit computer memories," IEEE Trans. Nucl. Sci., vol. NS-26, no. 6, pp. 5087-5091, Dec. 1979.
4. L. Adams, E. J. Daly, R. Harboe-Sorensen, R. Nickson, J. Haines, W. Schafer, M. Conrad, H. Griech, J. Merkel, T. Schwall, and R. Henneck, "A verified proton induced latchup in space," IEEE Trans. Nucl. Sci., vol. 39, no. 6, pp. 1804-1808, Dec. 1992.
5. D. K. Nichols, J. R. Coss, R. K. Watson, H. R. Schwartz, and R. L. Pease, "An observation of proton-induced latchup," IEEE Trans. Nucl. Sci., vol. 39, no. 6, pp. 1654-1656, Dec. 1992.
6. A. H. Johnston, G. M. Swift, and L. D. Edmonds, "Latchup in integrated circuits from energetic protons," IEEE Trans. Nucl. Sci., vol. 44, no. 6, pp. 2367-2377, Dec. 1997.
7. A. H. Johnston, "The influence of VLSI technology evolution on radiation-induced latchup in space systems," IEEE Trans. Nucl. Sci., vol. 43, no. 2, pp. 505-521, Apr. 1996.
8. P. E. Dodd, M. R. Shaneyfelt, J. R. Schwank, and G. L. Hash, "Neutron-induced soft errors, latchup, and comparison of SER test methods for SRAM technologies," in Int. Electron Devices Meeting (IEDM'02) Dig., 2002, pp. 333-336.
9. P. E. Dodd, M. R. Shaneyfelt, J. R. Schwank, and G. L. Hash, "Neutron-induced latchup in SRAMs at ground level," in IEEE Int. Reliability Physics Symp. Proc., 2003, pp. 51-55.
10. R. Baumann, "Single-event effects in advanced CMOS technology," presented at the IEEE NSREC Short Course, Seattle, WA, Jul. 2005.
11. D. McMorrow, S. Buchner, M. Baze, R. Bartholet, R. Katz, M. O'Bryan, C. Poivey, K. A. Label, R. Ladbury, M. Maher, and F. W. Sexton, "Laser-induced latchup screening and mitigation in CMOS devices," IEEE Trans. Nucl. Sci., vol. 53, no. 4, pp. 1819-1824, Aug. 2006.
12. J. R. Schwank, M. R. Shaneyfelt, J. Baggio, P. E. Dodd, J. A. Felix, V. Ferlet-Cavrois, P. Paillet, D. Lambert, F. W. Sexton, G. L. Hash, and E. Blackmore, "Effects of particle energy on proton-induced single-event latchup." IEEE Trans. Nucl. Sci., vol. 52, no. 6, pp. 2622-2629, Dec. 2005.
13. W. Morris, "Latchup in CMOS," in IEEE Int. Reliability Physics Symp. Proc., Dallas, TX, 2003, pp. 76-84.
14. G. Boselli, V. Reddy, and C. Duvvury, "Latch-up in 65 nm CMOS technology: A scaling perspective," in IEEE Int. Reliability Physics Symp. Proc., San Jose, CA, 2005, pp. 137-144.
15. J. R. Schwank, M. R. Shaneyfelt, J. Baggio, P. E. Dodd, J. A. Felix, V. Ferlet-Cavrois, P. Paillet, G. K. Lum, S. Girard, and E. Blackmore, "Effects of angle of incidence on proton and neutron-induced single-event latchup," IEEE Trans. Nucl. Sci., vol. 53, no. 6, pp. 3122-3131, Dec. 2006.
16. A. H. Johnston, B. W. Hughlock, M. P. Baze, and R. E. Plaag, "The effect of temperature on single-particle latchup," IEEE Trans. Nucl. Sci., vol. 38, no. 6, pp. 1435-1441, Dec. 1991.
17. W. A. Kolasinski, R. Koga, E. Schnauss, and J. Duffey, "The effect of elevated temperature on latchup and bit errors in CMOS devices," IEEE Trans. Nucl. Sci., vol. NS-33, no. 6, pp. 1605-1609, Dec. 1986.
18. JEDEC Test Std., JESD57 [Online]. Available: http://www.jedec.org
19. IEEE Recommended Practice For Latchup Test Methods For CMOS and BiCMOS Integrated-Circuit Process Characterization, IEEE Electron Device Society, IEEE Std. 1181-1991.
20. P. J. McNulty, W. G. Abdel-Kader, W. J. Beauvais, L. Adams, E. J. Daly, and R. Harboe-Sorensen, "Simple model for proton-induced latch-up," IEEE Trans. Nucl. Sci., vol. 40, no. 6, pp. 1947-1951, Dec. 1993.
21. J. Levinson, J. Barak, A. Zentner, A. Akkerman, and Y. Lifshitz, "On the angular dependence of proton induced events and charge collection," IEEE Trans. Nucl. Sci., vol. 41, no. 6, pp. 2098-2102, Dec. 1994.
22. P. J. McNulty, W. G. Abdel-Kader, and G. E. Fanell, "Proton induced spallation reactions," Radiat. Phys. Chem., vol. 43, no. 1-2, pp. 139-149, Feb. 1994.
23. R. A. Reed, P. W. Marshal, H. S. Kim, P. J. McNulty, B. Fodness, T. M. Jordan, R. Reedy, C. Tabbert, M. S. T. Liu, W. Heikkila, S. Buchner, R. Ladbury, and K. A. LaBel, "Evidence for angular effects in proton-induced single-event upsets," IEEE Trans. Nucl. Sci., vol. 49, no. 6, pp. 3038-3044, Dec. 2002.
24. P. E. Dodd, J. R. Schwank, M. R. Shaneyfelt, J. A. Felix, G. L. Hash, S. M. Dalton, P. Paillet, V. Ferlet-Cavrois, J. Baggio, R. A. Reed, K. Hirose, and H. Saito, "H-1: Impact of heavy ion energy and nuclear interactions on single-event upset and latchup in integrated circuits," presented at the IEEE NSREC, Honolulu, HI, 2007.
25. K. M. Warren, R. A. Weller, M. H. Mendenhall, R. A. Reed, D. R. Ball, C. L. Howe, B. D. Olson, M. L. Alles, L. W. Massengill, R. D. Schrimpf, N. F. Haddad, S. E. Doyle, D. McMorrow, J. S. Melinger, and W. T. Lotshaw, "The contribution of nuclear reactions to heavy ion single event upset cross section measurements in a high-density SEU hardened SRAM," IEEE Trans. Nucl. Sci., vol. 52, no. 6, pp. 2125-2131, Dec. 2005.
26. K. M. Warren, R. A. Weller, B. D. Sierawski, R. A. Reed, M. H. Mendenhall, R. D. Schrimpf, L. W. Massengill, M. E. Porter, J. D. Wilkinson, K. A. Label, and J. Adams, "Application of RADSAFE to model single event upset response of a 0.25 μm CMOS SRAM," presented at the RADECS Conf., Athens, Greece, 2006.
27. R. A. Weller, A. L. Sternberg, L. W. Massengill, R. D. Schrimpf, and D. M. Fleetwood, "Evaluating average and atypical response in radiation effects simulations," IEEE Trans. Nucl. Sci., vol. 50, no. 6, pp. 2265-2271, Dec. 2003.
28. D. R. Ball, K. M. Warren, R. A. Weller, R. A. Reed, A. Kobayashi, J. A. Pellish, M. H. Mendenhall, C. L. Howe, L. W. Massengill, R. D. Schrimpf, and N. F. Haddad, "Simulating nuclear events in a TCAD model of a high-density SEU hardened SRAM technology," IEEE Trans. Nucl. Sci., vol. 53, no. 4, pp. 1794-1798, Aug. 2006.
29. M. H. Mendenhall and R. A. Weller, "An algorithm for computing screened Coulomb scattering in Geant4," Nucl. Instrum. Methods, vol. 227, pp. 420-130, 2005.
30. C. L. Howe, R. A. Weller, R. A. Reed, M. H. Mendenhall, K. M. Warren, D. R. Ball, L. W. Massengill, K. A. LaBel, J. W. Howard, and N. F. Haddad, "Role of heavy-ion nuclear reactions in determining on-orbit single event error rates," IEEE Trans. Nucl. Sci., vol. 52, no. 6, pp. 2182-2188, Dec. 2005.
31. A. S. Kobayashi, D. R. Ball, K. M. Warren, R. A. Reed, N. Haddad, M. H. Mendenhall, R. D. Schrimpf, and R. A. Weller, "The effect of metallization layers on single event susceptibility," IEEE Trans. Nucl. Sci., vol. 52, no. 6, pp. 2189-2193, Dec. 2005.