DC characterization of an InP-InGaAs tunneling emitter bipolar transistor (TEBT)

IEEE Transactions on Electron Devices

Volumn 50, Issue 4, 2003, Pages 874-879

  Chen, Chun Yuan ^a   Cheng, Shiou Ying ^b   Chiou, Wen Hui ^a   Chuang, Hung Ming ^a   Liu, Rong Chau ^c   Yen, Chih Hung ^a   Chen, Jing Yuh ^a   Cheng, Chin Chuan ^a   Liu, Wen Chau ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b ORIENTAL INSTITUTE OF TECHNOLOGY   (Taiwan)

^c CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

InGaP GaAs; Offset voltage; Temperature dependent characteristics; Tunneling emitter bipolar transistor (TEBT); Ultralow current

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC POTENTIAL; POWER ELECTRONICS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

OFFSET VOLTAGE;

BIPOLAR TRANSISTORS;

EID: 0037818504     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.812107     Document Type: Article

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