Temperature dependence of InGaP/GaAs heterojunction bipolar transistor DC and small-signal behavior

IEEE Transactions on Electron Devices

Volumn 46, Issue 4, 1999, Pages 634-640

  Ahmari, David A ^a   Raghavan, Gopal ^a   Hartmann, Quesnell J ^a,b   Hattendorf, Michael L ^b,c   Feng, Milton ^c   Stillman, Gregory E ^c  

^a University of Illinois at Urbana Champaign   (United States)

^b EpiWorks   (United States)

^c Hughes Aircraft Co   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC RESISTANCE; ELECTRON TRANSPORT PROPERTIES; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; TEMPERATURE;

COLLECTOR DRIFT VELOCITY; DELAY TIME ANALYSIS; SMALL SIGNAL ANALYSIS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0032653049     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.753694     Document Type: Article

References (19)

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