Temperature Dependence of the Electron Impact Ionization in InGaP-GaAs-InGaP DHBTs

IEEE Transactions on Electron Devices

Volumn 51, Issue 3, 2004, Pages 304-310

  Neo, Wah Peng ^a   Wang, Hong ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

Alloy scattering; Electron impact ionization coefficient; Heterojunction bipolar transistors (HBTs); InGaP; Temperature dependence

Indexed keywords

ALLOY SCATTERING; ELECTRON IMPACT IONIZATION COEFFICIENT; INGAP; TEMPERATURE DEPENDENCE;

AVALANCHE DIODES; ELECTRIC BREAKDOWN; ELECTRON SCATTERING; IMPACT IONIZATION; PHOTODIODES; SEMICONDUCTING INDIUM COMPOUNDS; THERMAL EFFECTS; THERMODYNAMIC STABILITY;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 1642369794     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.822875     Document Type: Article

References (28)

1. M. Levinshtein, S. Rumyantsev, and M. Shur, Handbook Series on Semiconductor Parameters, Singapore: World Scientific, 1999, vol. 2, p. 38.
2. W. Liu, E. Beam III, and A. Khatibzadeh, "1.5-W CW S-band GaInP/GaAs/GaInP double heterojunction bipolar transistor," IEEE Electron Device Lett., vol. 15, pp. 215-217, June 1994.
3. J.-I. Song, C. Caneau, K.-B. Chough, and W.-P. Hong, "GaInP/GaAs double heterojunction bipolar transistor with high fT, fmax, and breakdown voltage," IEEE Electron Device Lett., vol. 15, pp. 10-12, Jan. 1994.
4. M. Sotoodeh, A. H. Khalid, H. Sheng, F. A. Amin, T. Gokdemir, A. A. Rezazadeh, A. P. Knights, and C. C. Button, "Direct extraction and numerical simulation of the base and collector delay times in double heterojunction bipolar transistors," IEEE Trans. Electron Devices, vol. 46, pp. 1081-1085, June 1999.
5. P.-F. Chen, Y. T. Hsin, R. J. Welty, P. M. Asbeck, R. L. Pierson, P. J. Zampardi, W.-J. Ho, M. C. V. Ho, and M. F. Chang, "Application of GaInP/GaAs DHBTs to power amplifiers for wireless communications," IEEE Trans. Microwave Theory Tech., vol. 47, pp. 1433-1438, Aug. 1999.
6. 0.48P diodes," IEEE Trans. Electron Devices, vol. 45, pp. 2096-2101, Oct. 1998.
7. R. Ghin, J. P. R. David, M. Hopkinson, M. A. Pate, G. J. Rees, and P. N. Robson, "Impact ionization coefficients in GaInP p-i-n diodes," Appl. Phys. Lett., vol. 70, pp. 3567-3569, 1997.
8. S. -L. Fu, T. P. Chin, M. C. Ho, C. W. Tu, and P. M. Asbeck, "Impact ionization coefficients in (100) GaInP," Appl. Phys. Lett., vol. 66, pp. 3507-3509, 1995.
9. W. P. Neo, H. Wang, and K. Radhakrishnan, "Measurements of InGaP electron ionization coefficient using InGaP-GaAs-InGaP double heterojunction bipolar transistors," IEEE Trans. Electron Devices, vol. 50, pp. 1711-1714, July 2003.
10. 0.48P," in Proc. Inst. Phys. Conf. Series, vol. 155, 1997, pp. 585-588.
11. G. A. Baraff, "Distribution functions and ionization rates for hot electrons in semiconductors," Phys. Rev., vol. 128, no. 6, pp. 2507-2517, 1962.
12. W. Shockley, "Problems related to p-n junctions in silicon," Solid State Electron., vol. 2, no. 1, pp. 35-60, Jan. 1961.
13. P. A. Wolff, "Theory of electron multiplication in silicon and germanium," Phys. Rev., vol. 95, no. 6, pp. 1415-1420, 1954.
14. Y. Okuto and C. R. Crowell, "Energy-conservation considerations in characterization of impact ionization in semiconductors," Phys. Rev. B, vol. 6, pp. 3076-3081, 1972.
15. C. R. Crowell and S. M. Sze, "Temperature dependence of avalanche multiplication in semiconductors," Appl. Phys. Lett., vol. 9, pp. 242-244, 1966.
16. J. W. Harrison and J. R. Hauser, "Theoretical calculations of electron mobility in ternary III-V compounds," J. Appl. Phys., vol. 47, pp. 292-300, 1976.
17. S. M. Sze, Physics of Semiconductor Devices. New York: Wiley, 1981.
18. 0.53As heterojunction bipolar transistors," Appl. Phys. Lett., vol. 60. no. 25, pp. 3150-3152, 1995.
19. S.A. Plimmer, J. P. R. David, and D. S. Ong, "The merits and limitations of local impact ionization theory," IEEE Trans. Electron Devices, vol. 47, pp. 1080-1088, May 2000.
20. Y. Okuto and C. R. Crowell, "Ionization coefficients in semiconductors: A nonlocalized property," Phys. Rev. B, vol. 10, pp. 4284-4296, 1974.
21. M. J. Malik, N. Chand, J. Nagle, R. W. Ryan, K. Alavi, and A. Y. Cho, "Temperature dependence of common-emitter I-V and collector breakdown voltage characteristics in AlGaAs/GaAs and AlInAs/GaInAs HBTs grown by MBE," IEEE Electron Device Lett., vol. 13, pp. 557-559, Nov. 1992.
22. 1-xAs for x = 0.1-0.4," Appl. Phys. Lett., vol. 52, pp. 296-298, 1988.
23. 1-y," IEEE J. Quantum Electron., vol. QE-21, pp. 1326-1338, Sept. 1985.
24. J. Bude and K. Hess, "Thresholds of impact ionization in semiconductors," J. Appl. Phys., vol. 72, pp. 3554-3561, 1992.
25. S. Krishnamurthy, M. A. Berding, and A. Sher, "Ballistic transport in semiconductor alloys," J. Appl. Phys., vol. 63, pp. 4540-4547, 1988.
26. 0.47As," Appl. Phys. Lett., vol. 41, pp. 732-734, 1982.
27. J. W. Harrison and J. R. Hauser, "Alloy scattering in ternary III-V compounds," Phys. Rev. B, vol. 13, pp. 5347-5350, 1976.
28. H.-F. Chau and D. Pavlidis, "A physics-based fitting and extrapolation method for measured impact ionization coefficients in III-V semiconductors," J. Appl. Phys., vol. 72, pp. 531-538, 1992.