Comprehensive study of InGaP/Al xGa 1-xAs/GaAs heterojunction bipolar transistors with different doping concentrations of Al xGa 1-xAs graded layers

Semiconductor Science and Technology

Volumn 19, Issue 3, 2004, Pages 351-358

  Cheng, Shiou Ying ^a   Chen, Jing Yuh ^b   Chen, Chun Yuan ^b   Chuang, Hung Ming ^b   Yen, Chih Hung ^b   Lee, Kuan Ming ^b   Liu, Wen Chau ^b  

^a ORIENTAL INSTITUTE OF TECHNOLOGY   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM GALLIUM ARSENIDE; DOPING CONCENTRATION; INDIUM GALLIUM PHOSPHIDE; OFFSET VOLTAGES; SATURATION VOLTAGES;

CURRENT DENSITY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; THICKNESS MEASUREMENT;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 1642387674     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/19/3/010     Document Type: Article

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