Effect of sulfur passivation of silicon (100) on Schottky barrier height: Surface states versus surface dipole

Journal of Applied Physics

Volumn 101, Issue 10, 2007, Pages

  Ali, Muhammad Yusuf ^a   Tao, Meng ^a  

^a University of Texas at Arlington   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CURRENT VOLTAGE CHARACTERISTICS; DANGLING BONDS; PASSIVATION; SILICON; WORK FUNCTION;

BARRIER HEIGHT; CAPACITANCE-VOLTAGE CHARACTERISTIC; SCHOTTKY BARRIER HEIGHT; SURFACE STATES;

SCHOTTKY BARRIER DIODES;

EID: 34249887923     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2733611     Document Type: Article

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