High performance Al0.35Ga0.65As/GaAs HBT's

IEEE Electron Device Letters

Volumn 21, Issue 5, 2000, Pages 196-199

  Welser, R E ^a   Pan, N ^a   Lutz, C R ^a   Vu, D P ^a   Zampardi, P J ^b,c   Pierson, R L ^b   McDermott, B T ^d  

^a KOPIN CORPORATION   (United States)

^b ROCKWELL SCIENCE CENTER   (United States)

^c IBM MICROELECTRONICS   (United States)

^d Epitronics/ATMI   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC SPACE CHARGE; ENERGY GAP; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; TEMPERATURE;

ALUMINUM GALLIUM ARSENIDE; INDIUM GALLIUM PHOSPHIDE; REVERSE HOLE INJECTION;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0033741258     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.841294     Document Type: Article

References (10)

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