Comparison of epitaxial thin layer GaN and InP passivations on InGaAs/GaAs near-surface quantum wells

Applied Physics Letters

Volumn 88, Issue 22, 2006, Pages

  Aierken, A ^a   Riikonen, J ^a   Sormunen, J ^a   Sopanen, M ^a   Lipsanen, H ^a  

^a AALTO UNIVERSITY   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; NITRIDING; OPTICAL PROPERTIES; PASSIVATION; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR QUANTUM WELLS;

GAN; INP; NITRIDATION METHODS; PHOTOREFLECTANCE;

THIN FILMS;

EID: 33744829232     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2208557     Document Type: Article

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