Soft nitridation of GaAs(100) by hydrazine sulfide solutions: Effect on surface recombination and surface barrier

Applied Physics Letters

Volumn 90, Issue 2, 2007, Pages

  Berkovits, V L ^a   Paget, D ^b   Karpenko, A N ^a   Ulin, V P ^a   Tereshchenko, O E ^c  

^a IOFFE INSTITUTE   (Russian Federation)

^b LABORATOIRE DE PHYSIQUE DE LA MATIÈRE CONDENSÉE   (France)

^c NOVOSIBIRSK STATE UNIVERSITY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

FERMI LEVEL; PASSIVATION; PHOTOLUMINESCENCE; SULFUR COMPOUNDS; SURFACE PROPERTIES; VELOCITY MEASUREMENT; X RAY PHOTOELECTRON SPECTROSCOPY;

HYDRAZINE SULFIDE SOLUTIONS; RECOMBINATION VELOCITY; SURFACE BARRIER; SURFACE DEFECTS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 33846210600     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2402233     Document Type: Article

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