Novel delta-doped InAlGaP/GaAs heterojunction bipolar transistor

IEEE Electron Device Letters

Volumn 29, Issue 7, 2008, Pages 671-673

  Lin, Yu Shyan ^a   Jiang, Jia Jhen ^a  

^a NATIONAL DONG HWA UNIVERSITY   (Taiwan)

Author keywords

Barrier height; Delta doped; Ebers Moll model; Heterojunction bipolar transistor (HBT); InAlGaP; Metalorganic chemical vapor deposition (MOCVD); Offset voltage; Temperature; Valence band discontinuity

Indexed keywords

BICMOS TECHNOLOGY; BIPOLAR TRANSISTORS; HETEROJUNCTION BIPOLAR TRANSISTORS; TRANSISTORS;

COLLECTOR CURRENTS; CURRENT GAINS; DELTA-DOPED; DELTA-DOPING; HETERO JUNCTION; HETERO JUNCTION BIPOLAR TRANSISTOR (HBT);

PROTON IRRADIATION;

EID: 47249108177     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.2000604     Document Type: Article

References (14)

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