AlN/AlGaN short-period superlattice sacrificial layers in laser lift-off for vertical-type AlGaN-based deep ultraviolet light emitting diodes

Applied Physics Letters

Volumn 94, Issue 6, 2009, Pages

  Takeuchi, Misaichi ^a,b   Maegawa, Tomohiro ^c   Shimizu, Hiroshi ^c   Ooishi, Shin ^c   Ohtsuka, Takumi ^c   Aoyagi, Yoshinobu ^b  

^a RIKEN   (Japan)

^b RITSUMEIKAN UNIVERSITY   (Japan)

^c TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; LIGHT EMISSION; LIGHT EMITTING DIODES; SEMICONDUCTING GALLIUM; ULTRAVIOLET RADIATION;

ALGAN; ALN; BULK SUBSTRATES; DEEP-ULTRAVIOLET LIGHT-EMITTING DIODES; LASER LIFT-OFFS; SACRIFICIAL LAYERS; SHORT-PERIOD SUPERLATTICES; VERTICAL TYPES;

LIGHT SOURCES;

EID: 60349099236     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3081060     Document Type: Article

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