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Volumn 35, Issue 4, 2006, Pages 750-753
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Optimized doping and contact scheme for low-voltage 275-nm deep ultraviolet LEDs
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Author keywords
AlGaN; Deep ultraviolet; Light emitting diode (LED); Metalorganic chemical vapor deposition (MOCVD); SiC
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Indexed keywords
ACTIVATION TEMPERATURE;
ALGAN;
DEEP ULTRAVIOLET;
METALORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD);
SECONDARY ION MASS SPECTROSCOPY (SIMS);
ALUMINUM;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
OXYGEN;
SILICON CARBIDE;
SPECTROSCOPIC ANALYSIS;
ULTRAVIOLET DEVICES;
LIGHT EMITTING DIODES;
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EID: 33646726157
PISSN: 03615235
EISSN: None
Source Type: Journal
DOI: 10.1007/s11664-006-0133-x Document Type: Conference Paper |
Times cited : (9)
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References (12)
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