메뉴 건너뛰기




Volumn 35, Issue 4, 2006, Pages 750-753

Optimized doping and contact scheme for low-voltage 275-nm deep ultraviolet LEDs

Author keywords

AlGaN; Deep ultraviolet; Light emitting diode (LED); Metalorganic chemical vapor deposition (MOCVD); SiC

Indexed keywords

ACTIVATION TEMPERATURE; ALGAN; DEEP ULTRAVIOLET; METALORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD); SECONDARY ION MASS SPECTROSCOPY (SIMS);

EID: 33646726157     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-006-0133-x     Document Type: Conference Paper
Times cited : (9)

References (12)
  • 10
    • 16644388461 scopus 로고    scopus 로고
    • Presented at Physics and Applications of Optoelectronic Devices, OE104
    • J. Piprek, C. Moe, S. Keller, S. Nakamura, and S.P. DenBaars (Presented at Physics and Applications of Optoelectronic Devices, OE104), Proc. of SPIE 5594, 177 (2004).
    • (2004) Proc. of SPIE , vol.5594 , pp. 177
    • Piprek, J.1    Moe, C.2    Keller, S.3    Nakamura, S.4    DenBaars, S.P.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.