First operation of AIGaN channel high electron mobility transistors

Applied Physics Express

Volumn 1, Issue 1, 2008, Pages

  Nanjo, Takuma ^a   Takeuchi, Misaichi ^b,c   Suita, Muneyoshi ^a   Abe, Yuji ^a   Oishi, Toshiyuki ^a   Tokuda, Yasunori ^a   Aoyagi, Yoshinobu ^b,c  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

^b RIKEN   (Japan)

^c TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; ENERGY GAP; GALLIUM NITRIDE; HETEROJUNCTION BIPOLAR TRANSISTORS; ION BOMBARDMENT; ION IMPLANTATION; IONIZATION OF GASES; MOSFET DEVICES; OHMIC CONTACTS; SEMICONDUCTING GALLIUM; SILICON; TRANSISTORS;

BANDGAP; BREAK DOWN VOLTAGES; CHANNEL LAYERS; HIGH ELECTRON MOBILITIES; HIGH FREQUENCIES; ION IMPLANTATION DOPING; OHMIC CONTACT RESISTANCES; POWER OPERATIONS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 55349106521     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.1.011101     Document Type: Article

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