Improving reliability of poly-Si TFTs with channel layer and gate oxide passivated by NH3/N2O plasma

Microelectronics Reliability

Volumn 44, Issue 3, 2004, Pages 435-442

  Zeng, Xiangbin ^a   Sun, X W ^a   Li, Junfeng ^a   Sin, Johnny K O ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; CHEMICAL VAPOR DEPOSITION; CRYSTAL DEFECTS; ELECTRIC POTENTIAL; GRAIN BOUNDARIES; HYDROGENATION; LIQUID CRYSTAL DISPLAYS; PASSIVATION; PLASMA ETCHING; POLYSILICON; THIN FILMS;

GATE DIELECTRIC; ORGANIC LIGHT-EMITTING DEVICES (OLED); PLASMA TREATMENT;

THIN FILM TRANSISTORS;

EID: 1142300327     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2003.10.007     Document Type: Article

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