Influence of Si nanocrystal distributed in the gate oxide on the MOS capacitance

IEEE Transactions on Electron Devices

Volumn 53, Issue 4, 2006, Pages 730-736

  Ng, C Y ^a   Chen, T P ^a   Ding, L ^a   Yang, M ^a   Wong, J I ^a   Zhao, P ^a   Yang, X H ^a   Liu, K Y ^a   Tse, M S ^a   Trigg, A D ^b   Fung, S ^c  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

^c UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

Dielectric constant; MOS capacitance; Silicon nanocrystal

Indexed keywords

APPROXIMATION THEORY; CAPACITANCE; ION IMPLANTATION; MOS CAPACITORS; NANOSTRUCTURED MATERIALS; PERMITTIVITY;

GATE OXIDE; SILICON NANOCRYSTAL;

SEMICONDUCTING SILICON;

EID: 33645731650     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.870872     Document Type: Article

References (19)

1. S. Tiwari, F. Rana, K. Chan, H. Hanafi, W. Chan, and D. Buchanan, "Volatile and non-volatile memories in silicon with nano-crystal storage," in IEDM Tech. Dig., Washington, DC, 1995, pp. 521-524.
2. S. Tiwari, F. Rana, H. Hanafi, A. Hartstein, E. F. Crabbe, and K. Chan, "A silicon nanocrystals based memory," Appl. Phys. Lett., vol. 68, no. 10, pp. 1377-1379, Mar. 1996.
3. G. Ammendola, V. Ancarani, V. Triolo, M. Bileci, D. Corso, I. Crupi, L. Perniola, C. Gerardi, S. Lombardo, and B. DeSalvo, "Nanocrystal memories for FLASH device applications," Solid State Electron., vol. 48, no. 9, pp. 1483-1488, Sep. 2004.
4. 2 matrix," Jpn. J. Appl. Phys. 2, Lett., vol. 39, no. 8A, pp. L792-L795, Aug. 2000.
5. I. Kim, S. Han, K. Han, K. Lee, and H. Shin, "Si nanocrystal memory cell with room-temperature single electron effects," Jpn. J. Appl. Phys. 1, Regul. Rap. Short Notes, vol. 40, no. 2A, pp. 447-451, Feb. 2001.
6. +-implanted gate oxides," Microelectron. Eng., vol. 59, no. 1, pp. 247-252, Nov. 2001.
7. 2 films with electrostatic force microscopy," Appl. Phys. Lett., vol. 85, no. 14, pp. 2941-2943, Oct. 2004.
8. C. Y. Ng, T. P. Chen, Y. Liu, M. S. Tse, and D. Gui, "Modulation of capacitance magnitude by charging/discharging in silicon nanocrystals distributed throughout the gate oxide in MOS structures," Electrochem. Solid-State Lett., vol. 8, no. 1, pp. G8-G10, 2005.
9. Y. Shi, K. Saito, H. Ishikuro, and T. Hiramoto, "Effects of interface traps on charge retention characteristics in silicon-quantum-dot-based metal-oxide-semiconductor diodes," Jpn. J. Appl. Phys. 1, Regul. Rap. Short Notes, vol. 38, no. 1B, pp. 425-428, Jan. 1999.
10. Y. Liu, T. P. Chen, C. Y. Ng, M. S. Tse, P. Zhao, Y. Q. Fu, S. Zhang, and S. Fung, "Random capacitance modulation due to charging/discharging in Si nanocrystals embedded in gate dielectric," Nanotechnol., vol. 16, no. 8, pp. 1119-1122, Aug. 2005.
11. S. Lombardo, B. De Salvo, C. Gerardi, and T. Baron, "Silicon nanocrystal memories," Microlectron. Eng., vol. 72, no. 1-4, pp. 388-394, Apr. 2004.
12. P. Dimitrakis, E. Kapetanakis, D. Tsoukalas, D. Skarlatos, C. Bonafos, G. B. Asssayag, A. Claverie, M. Perego, M. Fanciulli, V. Soncini, R. Sotgiu, A. Agarwal, M. Ameen, C. Sohl, and P. Normand, "Silicon nanocrystal memory devices obtained by ultra-low-energy ion-beam synthesis," Solid State Electron., vol. 48, no. 9, pp. 1511-1517, Sep. 2004.
13. 2 matrix," in Proc. Int. Symp. Integrated Circuits, Devices and Systems (ISIC), Singapore, 2004, pp. 281-283.
14. 2 matrix," Phys. Rev. B, Condens. Matter, vol. 68, no. 15, pp. 153301-153304, Oct. 2003.
15. L. W. Wang and A. Zunger, "Dielectric constants of silicon quantum dots," Phys. Rev. Lett., vol. 73, no. 7, pp. 1039-1042, Aug. 1994.
16. S.M. Sze, Physics of Semiconductor Devices, 2nd ed. New York: Wiley. 1981
17. 2 matrix," Appl. Phys. Lett., vol. 87, no. 12, pp. 121903-1-121903-3, Sep. 2005.
18. 2 matrix inducing reduction/recovery in the total capacitance and tunneling current," Smart Mater. Struct., vol. 15, no. 1, pp. S43-S46, Feb. 2006.
19. R. Govindaraj, R. Kesavamoorthy, R. Mythili, and B. Viswanathan, "The formation and characterization of silver clusters in zirconia," J. Appl. Phys., vol. 90, no. 2, pp. 958-963, Jul. 2001.