Irradiation effect on dielectric properties of hafnium and gadolinium oxide gate dielectrics

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 27, Issue 1, 2009, Pages 416-420

  Garcia H ^a   Duenas S ^a   Castan H ^a   Gomez A ^a   Bailon L ^a   Barquero, R ^b   Kukli, K ^c,d   Ritala, M ^d   Leskela M ^d  

^a UNIVERSITY OF VALLADOLID   (Spain)

^b HOSPITAL CLÍNICO UNIVERSITARIO DE VALLADOLID   (Spain)

^c UNIVERSITY OF TARTU   (Estonia)

^d UNIVERSITY OF HELSINKI   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; DEEP LEVEL TRANSIENT SPECTROSCOPY; DIELECTRIC DEVICES; DIELECTRIC MATERIALS; DIELECTRIC PROPERTIES; ELECTRIC PROPERTIES; GADOLINIUM; GATES (TRANSISTOR); HAFNIUM; HAFNIUM COMPOUNDS; IONIZING RADIATION; IRRADIATION; MOS CAPACITORS; OZONE WATER TREATMENT; PHOTONS; RADIATION; RADIATION EFFECTS; RADIATION SHIELDING; RADIOACTIVITY; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; TRANSIENTS;

ATOMIC LAYERS; BULK DIELECTRICS; CAPACITANCE-VOLTAGE CURVES; CURRENT VOLTAGES; DEEP-LEVEL TRANSIENT SPECTROSCOPIES; DISORDER-INDUCED GAP STATE DENSITIES; ELECTRICAL PROPERTIES; FLAT-BAND VOLTAGES; GADOLINIUM OXIDES; GATE-LEAKAGE CURRENTS; HIGH - K DIELECTRICS; IONIZING RADIATION EFFECTS; IRRADIATION EFFECTS; METAL-OXIDE SEMICONDUCTORS; PHOTON RADIATIONS; SILICON INTERFACES; TRAP DENSITIES;

GATE DIELECTRICS;

EID: 60149109532     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3021040     Document Type: Article

References (15)

1. J. Robertson, Rep. Prog. Phys. 69, 327 (2006).
2. M. Houssa, L. Pantisano, L.-Å. Ragnarsson, R. Degraeve, T. Schram, G. Pourtois, S. De Gendt, G. Groeseneken, and M. M. Heyns, Mater. Sci. Eng., R. 51, 37 (2006).
3. P. S. Winokur, J. R. Schwank, P. J. McWhorter, P. V. Dressendorfer, and D. C. Turpin, IEEE Trans. Nucl. Sci. 31, 1453 (1984).
4. T. P. Ma and P. V. Dressendorfer, Ionizing Radiation Effect in MOS Devices and Circuits (Wiley, New York, 1989).
5. T. R. Oldham, Ionizing Radiation Effects in MOS Oxides (World Scientific, Singapore, 1999).
6. S. Dueas, H. Castán, H. García, J. Barbolla, K. Kukli, and J. Aarik, J. Appl. Phys. 96, 1365 (2004).
7. S. Dueas, H. Castán, H. García, A. Gómez, L. Bailón, K. Kukli, T. Hatanpää, J. Lu, M. Ritala, and M. Leskelä, J. Electrochem. Soc. 154, G207 (2007).
8. E. San Andŕs, M. Toledano-Luque, A. del Prado, M. A. Navacerrada, I. Mártil, G. González-Díaz, W. Bohne, J. Röhrich, and E. Strub, J. Vac. Sci. Technol. A 23, 1523 (2005).
9. S. Dueas, H. Castán, H. García, A. Gómez, L. Bailón, M. Toledano-Luque, I. Mártil, and G. González- Díaz, Semicond. Sci. Technol. 22, 1344 (2007).
10. H. Castán, S. Dueas, J. Barbolla, E. Redondo, N. Blanco, I. Mártil, and G. González-Díaz, Microelectron. Reliab. 40, 845 (2000).
11. S. Dueas, H. Castán, H. García, L. Bailón, K. Kukli, M. Ritala, and M. Leskelä, Microelectron. Reliab. 47, 653 (2007).
12. V. V. Afanas'ev and A. Stesmans, J. Appl. Phys. 95, 2518 (2004).
13. R. A. Devine, M. A. Quevedo-Lopez, and H. Alshareef, J. Appl. Phys. 103, 064104 (2008).
14. R. A. Devine, T. Busani, M. Quevedo-López, and H. N. Alshareef, J. Appl. Phys. 101, 104101 (2007).
15. T. P. Ma, Semicond. Sci. Technol. 4, 1061 (1989).