SCOPUS 정보 검색 플랫폼

Volumn 101, Issue 10, 2007, Pages

Electrical bias stressing and radiation induced charge trapping in HfO 2/SiO2 dielectric stacks

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE INJECTION; DIELECTRIC MATERIALS; HAFNIUM COMPOUNDS; SILICA;

CYCLIC INJECTION; DIELECTRIC STACKS; ELECTRIC BIAS STRESSING; RADIATION SOFT;

CHARGE TRAPPING;

EID: 34249899399 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.2727435 Document Type: Article

Times cited : (7)

References (12)

1
- 1642363251
- 0021-8979 10.1063/1.1644904
- M. Houssa, M. Aoulaiche, J. L. Autran, C. Parthasarathy, N. Revil, and E. Vincent, J. Appl. Phys. 0021-8979 10.1063/1.1644904 95, 2786 (2004).
- (2004) J. Appl. Phys. , vol.95 , pp. 2786
- Houssa, M.¹ Aoulaiche, M.² Autran, J.L.³ Parthasarathy, C.⁴ Revil, N.⁵ Vincent, E.⁶

2
- 1642364918
- 0021-8979 10.1063/1.1641521
- V. V. Afanas'ev and A. Stesmans, J. Appl. Phys. 0021-8979 10.1063/1.1641521 95, 2518 (2004).
- (2004) J. Appl. Phys. , vol.95 , pp. 2518
- Afanas'Ev, V.V.¹ Stesmans, A.²

3
- 0019242095
- 0018-9499
- F. B. McLean, IEEE Trans. Nucl. Sci. 0018-9499 27, 1651 (1980).
- (1980) IEEE Trans. Nucl. Sci. , vol.27 , pp. 1651
- McLean, F.B.¹

4
- 0036953033
- 0018-9499 10.1109/TNS.2002.805334
- A. Y. Kang, P. M. Lenahan, and J. F. Conley, Jr., IEEE Trans. Nucl. Sci. 0018-9499 10.1109/TNS.2002.805334 49, 2636 (2002).
- (2002) IEEE Trans. Nucl. Sci. , vol.49 , pp. 2636
- Kang, A.Y.¹ Lenahan, P.M.² Conley Jr. J., F.³

5
- 33144463166
- 0018-9499 10.1109/TNS.2005.860665
- J. T. Ryan, P. M. Lenahan, A. Y. Kang, J. F. Conley, Jr., G. Bersuker, and P. Lysaght, IEEE Trans. Nucl. Sci. 0018-9499 10.1109/TNS.2005.860665 52, 2272 (2005).
- (2005) IEEE Trans. Nucl. Sci. , vol.52 , pp. 2272
- Ryan, J.T.¹ Lenahan, P.M.² Kang, A.Y.³ Conley Jr. J., F.⁴ Bersuker, G.⁵ Lysaght, P.⁶

6
- 1642267430
- 0026-2714
- J. A. Felix, J. R. Schwank, D. M. Fleetwood, M. R. Shaneyfelt, and E. P. Gusev, Microelectron. Reliab. 0026-2714 44, 563 (2004).
- (2004) Microelectron. Reliab. , vol.44 , pp. 563
- Felix, J.A.¹ Schwank, J.R.² Fleetwood, D.M.³ Shaneyfelt, M.R.⁴ Gusev, E.P.⁵

7
- 33144456552
- 0018-9499
- X. J. Zhou, D. M. Fleetwood, J. A. Felix, E. P. Gusev, and C. D'Emic, IEEE Trans. Nucl. Sci. 0018-9499 52, 2231 (2005).
- (2005) IEEE Trans. Nucl. Sci. , vol.52 , pp. 2231
- Zhou, X.J.¹ Fleetwood, D.M.² Felix, J.A.³ Gusev, E.P.⁴ D'Emic, C.⁵

8
- 0004005306
- Wiley, New York
- S. M. Sze, The Physics of Semiconductor Devices (Wiley, New York, 1980), Chap. 8.
- (1980) The Physics of Semiconductor Devices
- Sze, S.M.¹

9
- 36449004449
- 0021-8979 10.1063/1.348689
- L. P. Trombetta, F. J. Feigl, and R. J. Zeto, J. Appl. Phys. 0021-8979 10.1063/1.348689 69, 2512 (1991).
- (1991) J. Appl. Phys. , vol.69 , pp. 2512
- Trombetta, L.P.¹ Feigl, F.J.² Zeto, R.J.³

10
- 0037097958
- 0021-8979 10.1063/1.1471920
- Z. Xu, M. Houssa, R. Carter, M. Naili, S. De Gendt, and M. Heyns, J. Appl. Phys. 0021-8979 10.1063/1.1471920 91, 10127 (2002).
- (2002) J. Appl. Phys. , vol.91 , pp. 10127
- Xu, Z.¹ Houssa, M.² Carter, R.³ Naili, M.⁴ De Gendt, S.⁵ Heyns, M.⁶

11
- 33847708382
- S. Hall, O. Buiu, and Y. Lu, IEEE Trans. Electron Devices 54, 272 (2007).
- (2007) IEEE Trans. Electron Devices , vol.54 , pp. 272
- Hall, S.¹ Buiu, O.² Lu, Y.³

12
- 0023538273
- 0018-9499
- R. J. Krantz, L. W. Aukerman, and T. C. Zietlow, IEEE Trans. Nucl. Sci. 0018-9499 34, 1196 (1987).
- (1987) IEEE Trans. Nucl. Sci. , vol.34 , pp. 1196
- Krantz, R.J.¹ Aukerman, L.W.² Zietlow, T.C.³

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.