Radiation response of nanometric HfSiON/ SiO2 gate stacks

Journal of Applied Physics

Volumn 103, Issue 6, 2008, Pages

  Devine, R A B ^a,b   Quevedo Lopez, M A ^c   Alshareef, H ^c  

^a NEW MEXICO INSTITUTE OF MINING AND TECHNOLOGY   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

^c The University of Texas at Dallas   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TRAPS; ION BOMBARDMENT; NEGATIVE IONS; STACKING FAULTS; X RAYS;

DIELECTRIC STACKS; NANOMETRIC; RADIATION RESPONSE; X-RAY IRRADIATION;

GATE DIELECTRICS;

EID: 41549106748     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2838186     Document Type: Article

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