Modified Airy function method for modeling of direct tunneling current in metal-oxide-semiconductor structures

Applied Physics Letters

Volumn 79, Issue 12, 2001, Pages 1831-1833

  Wang, Jing ^a   Ma, Yutao ^a   Tian, Lilin ^a   Li, Zhijian ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035903405     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1403658     Document Type: Article

References (9)

1. National Technology Roadmap for Semiconductors (Semiconductor Industry Association, Austin, TX, 1997).
2. S.-H. Lo, D. A. Buchanan, Y. Taur, and W. Wang, IEEE Electron Device Lett. 18, 209 (1997).
3. L. F. Register, E. Rosenbaum, and K. Yang, Appl. Phys. Lett. 74, 457 (1999).
4. W.-K. Shih, E. X. Wang, S. Jallepalli, F. Leon, C. M. Maziar, and A. F. Taschjr, Solid-State Electron. 42, 997 (1998).
5. N. Yang, W. K. Henson, J. R. Hauser, and J. J. Wortman, IEEE Trans. Electron Devices 46, 1464 (1999).
6. S. Mudanai, Y.-Y. Fan, Q. Ouyang, A. F. Tasch, F. Register, D. L. Kwong, and S. Banerjee, 2000 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2000), September 6-8, 2000, Seattle, WA (IEEE, Piscataway, NJ, 2000), p. 200.
7. I. Sune, P. Olivo, and B. Ricco, J. Appl. Phys. 70, 337 (1991).
8. K. S. Miyazaki and M. Hirose, Jpn. J. Appl. Phys., Part 2 36, L1541 (1997).
9. J. Maserjian and G. Petersson, Appl. Phys. Lett. 25, 50 (1974).