SCOPUS 정보 검색 플랫폼

Volumn 101, Issue 7, 2007, Pages

Oscillation of gate leakage current in double-gate metal-oxide- semiconductor field-effect transistors

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE DISTRIBUTION; ELECTRONIC STATES; GATE DIELECTRICS; GREEN'S FUNCTION; MOSFET DEVICES;

DRAIN VOLTAGE; GATE LEAKAGE CURRENT; RESONANT LIKE CHARACTER; TRANSPORT EQUATION;

LEAKAGE CURRENTS;

EID: 34247282067 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.2716874 Document Type: Article

Times cited : (14)

References (16)

1
- 0036930466
- J. Wang and M. Lundstrom, Tech. Dig. - Int. Electron Devices Meet. 2002, 707 (2002).
- (2002) Tech. Dig. - Int. Electron Devices Meet , vol.2002 , pp. 707
- Wang, J.¹ Lundstrom, M.²

2
- 0035309581
- E. Cassan, P. Dollfus, S. Galdin, and P. Hesto, IEEE Trans. Electron Devices 48, 715 (2001).
- (2001) IEEE Trans. Electron Devices , vol.48 , pp. 715
- Cassan, E.¹ Dollfus, P.² Galdin, S.³ Hesto, P.⁴

3
- 33645771671
- L. Ge, F. Gamiz, O. G. Workman, and S. Veeraraghavan, IEEE Trans. Electron Devices 53, 753 (2006).
- (2006) IEEE Trans. Electron Devices , vol.53 , pp. 753
- Ge, L.¹ Gamiz, F.² Workman, O.G.³ Veeraraghavan, S.⁴

4
- 0032028948
- H. S. Momose, S.-I. Nakamura, T. Ohguro, T. Yoshitomi, E. Morifuji, T. Morimoto, Y. Katsumata, and H. Iwai, IEEE Trans. Electron Devices 45, 691 (1998).
- (1998) IEEE Trans. Electron Devices , vol.45 , pp. 691
- Momose, H.S.¹ Nakamura, S.-I.² Ohguro, T.³ Yoshitomi, T.⁴ Morifuji, E.⁵ Morimoto, T.⁶ Katsumata, Y.⁷ Iwai, H.⁸

5
- 0032679052
- K. J. Yang and C. Hu, IEEE Trans. Electron Devices 46, 1500 (1999).
- (1999) IEEE Trans. Electron Devices , vol.46 , pp. 1500
- Yang, K.J.¹ Hu, C.²

6
- 0032614408
- E. Cassan, S. Galdin, P. Dollfus, and P. Hesto, J. Appl. Phys. 86, 3804 (1999).
- (1999) J. Appl. Phys , vol.86 , pp. 3804
- Cassan, E.¹ Galdin, S.² Dollfus, P.³ Hesto, P.⁴

7
- 0036470297
- R. Clerc, A. Spinelli, G. Ghibaudo, and G. Pananakakis, J. Appl. Phys. 91, 1400 (2002).
- (2002) J. Appl. Phys , vol.91 , pp. 1400
- Clerc, R.¹ Spinelli, A.² Ghibaudo, G.³ Pananakakis, G.⁴

8
- 11144227976
- A. Gehring and S. Selberherr, IEEE Trans. Device Mater. Reliab. 4, 306 (2004).
- (2004) IEEE Trans. Device Mater. Reliab , vol.4 , pp. 306
- Gehring, A.¹ Selberherr, S.²

9
- 23844534816
- E. P. Nakhmedov, K. Wieczorek, H. Burghardt, and C. Radehaus, J. Appl. Phys. 98, 024506 (2005).
- (2005) J. Appl. Phys , vol.98 , pp. 024506
- Nakhmedov, E.P.¹ Wieczorek, K.² Burghardt, H.³ Radehaus, C.⁴

10
- 0001415608
- C. Caroli, R. Combescot, P. Nozieres, and D. Saint-James, J. Phys. C 4, 916 (1971).
- (1971) J. Phys. C , vol.4 , pp. 916
- Caroli, C.¹ Combescot, R.² Nozieres, P.³ Saint-James, D.⁴

11
- 3643122627
- Y. Meir and N. S. Wingreen, Phys. Rev. Lett. 68, 2512 (1992).
- (1992) Phys. Rev. Lett , vol.68 , pp. 2512
- Meir, Y.¹ Wingreen, N.S.²

12
- 34247229662
- S. Datta, Superlattices Microstruct. 28, 4 (2000).
- (2000) Superlattices Microstruct , vol.28 , pp. 4
- Datta, S.¹

13
- 18644369368
- R. Venugopal, Z. Ren, S. Datta, M. S. Lundstrom, and D. Jovanovic, J. Appl. Phys. 92, 3730 (2002).
- (2002) J. Appl. Phys , vol.92 , pp. 3730
- Venugopal, R.¹ Ren, Z.² Datta, S.³ Lundstrom, M.S.⁴ Jovanovic, D.⁵

14
- 21644484375
- M. Bescond, K. Nehari, J. L. Autran, N. Cavassilas, D. Munteanu, and M. Lannoo, Tech. Dig. - Int. Electron Devices Meet. 2004, 617 (2004).
- (2004) Tech. Dig. - Int. Electron Devices Meet , vol.2004 , pp. 617
- Bescond, M.¹ Nehari, K.² Autran, J.L.³ Cavassilas, N.⁴ Munteanu, D.⁵ Lannoo, M.⁶

15
- 33845426952
- A. Svizhenko, M. P. Anantram, T. R. Govindan, and B. Siegel, J. Appl. Phys. 91, 2343 (2002).
- (2002) J. Appl. Phys , vol.91 , pp. 2343
- Svizhenko, A.¹ Anantram, M.P.² Govindan, T.R.³ Siegel, B.⁴

16
- 33751080598
- V. N. Do, P. Dollfus, and V. Lien Nguyen, J. Appl. Phys. 100, 093705 (2006).
- (2006) J. Appl. Phys , vol.100 , pp. 093705
- Do, V.N.¹ Dollfus, P.² Lien Nguyen, V.³

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.