Analysis of the role of current, temperature, and optical power in the degradation of InGaN-based laser diodes

IEEE Transactions on Electron Devices

Volumn 56, Issue 2, 2009, Pages 222-228

  Meneghini, Matteo ^a   Trivellin, Nicola ^a   Orita, Kenji ^b   Yuri, Masaaki ^b   Ueda, Daisuke ^b   Zanoni, Enrico ^a   Meneghesso, Gaudenzio ^a  

^a UNIVERSITY OF PADOVA   (Italy)

^b PANASONIC CORPORATION   (Japan)

Author keywords

Blu ray; Degradation; Gallium nitride; Laser diodes (LDs); Nonradiative recombination

Indexed keywords

ACTIVATION ENERGY; DIODES; GALLIUM ALLOYS; GALLIUM COMPOUNDS; GALLIUM NITRIDE; LADDER NETWORKS; LASERS; NITRIDES; SEMICONDUCTING GALLIUM;

ACTIVATED PROCESS; ACTIVE LAYERS; BLU-RAY; BLU-RAY TECHNOLOGIES; CONSTANT CURRENTS; CONSTANT TEMPERATURES; CURRENT LEVELS; DEGRADATION KINETICS; DEGRADATION RATES; DEVICE DEGRADATIONS; ENERGY VALUES; HIGH TEMPERATURES; LASER DIODES (LDS); NONRADIATIVE RECOMBINATION; NONRADIATIVE RECOMBINATION RATES; OPTICAL EFFICIENCIES; OPTICAL FIELDS; OPTICAL POWER; SQUARE ROOTS; STRESS CURRENTS; STRESS TIME; THRESHOLD CURRENTS;

DEGRADATION;

EID: 59949084542     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.2010602     Document Type: Article

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