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Physica Status Solidi (A) Applied Research

Volumn 194, Issue 2 SPEC., 2002, Pages 419-422

Degradation analysis of InGaN laser diodes

(10) Kummler V a Bruderl G a Bader, S a Miller, S a Weimar, A a Lell, A a Harle V a Schwarz, U T b Gmeinwieser, N b Wegscheider, W b

a OSRAM OPTO SEMICONDUCTORS GMBH (Germany)

b UNIVERSITY OF REGENSBURG (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AGING OF MATERIALS; DEGRADATION; HEAT RESISTANCE; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SILICON CARBIDE; TEMPERATURE MEASUREMENT;

INDIUM GALLIUM NITROGEN; OPTICAL POWER; PULSED AGING; VERTICAL CURRENT PATH;

SEMICONDUCTOR LASERS;

EID: 0036960015 PISSN: 00318965 EISSN: None Source Type: Journal
DOI: 10.1002/1521-396X(200212)194:2<419::AID-PSSA419>3.0.CO;2-B Document Type: Article

Times cited : (35)

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