The role of current density and applied voltage during anodization for porous silicon

Czechoslovak Journal of Physics

Volumn 53, Issue 7, 2003, Pages 607-612

  Ohmukai, Masato ^a   Oda, Hideki ^a   Tsutsumi, Yasuo ^a  

^a NATIONAL INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Constant voltage; Layer thickness; Photoluminescence; Porous silicon

Indexed keywords

EID: 3543119522     PISSN: 00114626     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1024870401956     Document Type: Article

References (5)

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