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Volumn 5, Issue 1, 2006, Pages 69-90

Mechanism and simulation of uniform nanowires of porous silicon growth on p-Si substrate

Author keywords

Porous silicon; Simulation; Uniformity

Indexed keywords

ALGORITHMS; MATHEMATICAL MODELS; PARAMETER ESTIMATION; POROSITY; POROUS SILICON; SIMULATION; SUBSTRATES;

EID: 33646774336     PISSN: 0219581X     EISSN: None     Source Type: Journal    
DOI: 10.1142/S0219581X0600419X     Document Type: Article
Times cited : (10)

References (39)
  • 30
    • 0347874563 scopus 로고
    • eds. Z. C. Feng and R. Tsu (World Scientific, Singapore)
    • U. Gosele and V. Lehmann, Porous Silicon, eds. Z. C. Feng and R. Tsu (World Scientific, Singapore, 1994), p. 17.
    • (1994) Porous Silicon , pp. 17
    • Gosele, U.1    Lehmann, V.2
  • 33
    • 0040824328 scopus 로고
    • eds. Z. C. Feng and R. Tsu (World Scientific, Singapore)
    • V. P. Parkhutik, Porous Silicon, eds. Z. C. Feng and R. Tsu (World Scientific, Singapore, 1994), p. 301.
    • (1994) Porous Silicon , pp. 301
    • Parkhutik, V.P.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.