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Physica Status Solidi (A) Applied Research

Volumn 191, Issue 2, 2002, Pages 535-547

Conductivity modulation of porous silicon by formation parameters

(4) Dutta, S K a Hossain, S M b Chakraborty, S b Saha, H b

a City College (India)

b JADAVPUR UNIVERSITY (India)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRIC CONDUCTIVITY; POROSITY; SEMICONDUCTOR DOPING; SILICON WAFERS;

ELECTROCHEMICAL CELLS;

POROUS SILICON;

EID: 0036610904 PISSN: 00318965 EISSN: None Source Type: Journal
DOI: 10.1002/1521-396X(200206)191:2<535::AID-PSSA535>3.0.CO;2-H Document Type: Article

Times cited : (17)

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