Two-dimensional macroscopical simulations of porous silicon growth

Computational Materials Science

Volumn 24, Issue 1-2, 2002, Pages 99-104

  Barillaro, G ^a   Bruschi, P ^a   Pieri, F ^a  

^a UNIVERSITY OF PISA   (Italy)

Author keywords

Growth; Porous silicon; Simulation

Indexed keywords

DOPING GRADIENTS;

ANISOTROPY; ANODIC OXIDATION; COMPUTER SIMULATION; CRYSTAL GROWTH; CRYSTALLINE MATERIALS; CURRENT DENSITY; ETCHING; INTERFACES (MATERIALS); RATE CONSTANTS; SEMICONDUCTOR DOPING;

POROUS SILICON;

EID: 0036577043     PISSN: 09270256     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0927-0256(02)00170-2     Document Type: Article

References (13)