Microwave plasma generated in a narrow gap to achieve high power efficiency during diamond growth

Diamond and Related Materials

Volumn 18, Issue 2-3, 2009, Pages 117-120

  Yamada, Hideaki ^a   Chayahara, Akiyoshi ^a   Mokuno, Yoshiaki ^a   Shikata, Shin ichi ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Diamond; Microwave plasma CVD; Simulation

Indexed keywords

CARBON NANOTUBES; CHEMICAL VAPOR DEPOSITION; DIAMONDS; GROWTH (MATERIALS); IMAGE SEGMENTATION; MASS SPECTROMETRY; MICROWAVES; PLASMA DEPOSITION; PLASMAS; SECONDARY ION MASS SPECTROMETRY; SINGLE CRYSTALS;

DIAMOND; DIAMOND GROWTHS; GAS PRESSURES; HIGH-POWER; INPUT POWER; MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITIONS; MICROWAVE PLASMA CVD; MICROWAVE PLASMAS; NARROW GAPS; POWER EFFICIENCIES; SECONDARY ION MASS SPECTROSCOPIES; SIMULATION; SINGLE CRYSTAL DIAMONDS; SUBSTRATE TEMPERATURES;

ELECTRIC DISCHARGES;

EID: 59649117588     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2008.10.038     Document Type: Article

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