The effect of nitrogen addition during high-rate homoepitaxial growth of diamond by microwave plasma CVD

Diamond and Related Materials

Volumn 13, Issue 11-12, 2004, Pages 1954-1958

  Chayahara, A ^a   Mokuno, Y ^a   Horino, Y ^a   Takasu, Y ^a   Kato, H ^a   Yoshikawa, H ^a   Fujimori, N ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Diamond epitaxial growth; High rate growth; Microwave plasma CVD

Indexed keywords

ADDITION REACTIONS; DEPOSITION; EPITAXIAL GROWTH; MICROSCOPES; MICROWAVES; MORPHOLOGY; NITROGEN; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAMAN SPECTROSCOPY; X RAY DIFFRACTION ANALYSIS;

DIAMOND EPITAXIAL GROWTH; HIGH DENSITY PLASMAS (HDP); HIGH-RATE GROWTH; MICROWAVE PLASMA CVD;

DIAMONDS;

EID: 7544249735     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2004.07.007     Document Type: Conference Paper

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