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Volumn 47, Issue 4 PART 2, 2008, Pages 2680-2683
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Electrical characterization of metal-oxide-semiconductor memory devices with high-density self-assembled tungsten nanodots
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Author keywords
Flash memory; Memory window; Retention; SAND; Tungsten nanodot
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Indexed keywords
ANNEALING;
DATA STORAGE EQUIPMENT;
DIELECTRIC DEVICES;
ELECTRIC CONDUCTIVITY;
MOS DEVICES;
NANOSTRUCTURED MATERIALS;
OXYGEN;
PHOTODEGRADATION;
PHOTOELECTRON SPECTROSCOPY;
SEMICONDUCTING SILICON COMPOUNDS;
SEMICONDUCTOR DEVICES;
SEMICONDUCTOR MATERIALS;
SEMICONDUCTOR STORAGE;
SILICA;
SILICON COMPOUNDS;
TUNGSTEN;
WINDOWS;
X RAY PHOTOELECTRON SPECTROSCOPY;
CAPACITANCE CHARACTERISTICS;
ELECTRICAL CHARACTERIZATIONS;
HIGH-DENSITY;
MEMORY WINDOW;
MEMORY WINDOWS;
NANODOTS;
NONVOLATILE-MEMORY APPLICATIONS;
POST DEPOSITIONS;
PROGRAM/ERASE;
RETENTION;
RETENTION CHARACTERISTICS;
SEMICONDUCTOR MEMORIES;
SILICON OXIDES;
SMALL SIZES;
ULTRAHIGH DENSITIES;
X-RAY PHOTOELECTRON SPECTROSCOPIES;
FLASH MEMORY;
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EID: 52349111421
PISSN: 00214922
EISSN: 13474065
Source Type: Journal
DOI: 10.1143/JJAP.47.2680 Document Type: Article |
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Times cited : (14)
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References (12)
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