Novel SONOS-type nonvolatile memory device with optimal Al doping in HfAlO charge-trapping layer

IEEE Electron Device Letters

Volumn 29, Issue 3, 2008, Pages 265-268

  Tsai, Ping Hung ^a   Chang Liao, Kuei Shu ^a   Liu, Chu Yung ^a   Wang, Tien Ko ^a   Tzeng, P J ^b   Lin, C H ^b   Lee, L S ^b   Tsai, M J ^b  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

Atomic layer deposition (ALD); Charge trapping; Flash; HfAlO; Nonvolatile memory; Polysilicon oxide nitride oxide silicon (SONOS) type

Indexed keywords

ATOMIC LAYER DEPOSITION; CHARGE TRAPPING; FLASH MEMORY; HOT ELECTRONS; POLYSILICON; SEMICONDUCTOR DOPING;

ERASE ENDURANCE; OPERATION PROPERTIES; OPERATION SPEED; POLYSILICON-OXIDE-NITRIDE-OXIDE-SILICON; PROGRAM ENDURANCE;

NONVOLATILE STORAGE;

EID: 40749162001     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.915380     Document Type: Article

References (8)

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