Influence of incorporated non-metallic impurities on electromigration in copper damascene interconnect lines

Thin Solid Films

Volumn 517, Issue 8, 2009, Pages 2687-2690

  Stangl, M ^a,b   Liptak M ^a   Acker, J ^a,c   Hoffmann, V ^a   Baunack, S ^a   Wetzig, K ^a  

^a IFW DRESDEN   (Germany)

^b CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

^c Lausitz University of Applied Sciences   (Germany)

Author keywords

Copper; Electromigration; Impurities; Interconnects; Segregation

Indexed keywords

ACTIVATION ENERGY; ELECTROMIGRATION; IMPURITIES; OPTICAL INTERCONNECTS; REDUCTION; SEGREGATION (METALLOGRAPHY); SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICES;

CA-P LAYERS; COPPER DAMASCENES; CU INTERCONNECT; ELECTRO-CHEMICAL DEPOSITIONS; IMPURITY CONTENTS; INDUCED DEGRADATIONS; INTERCONNECT LINES; INTERCONNECTS; MATERIAL PROPERTIES; MECHANICAL STRESS; METALLIZATIONS; NON-METALLIC IMPURITIES; SEGREGATION; VOID FORMATIONS;

COPPER;

EID: 59149099071     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2008.10.100     Document Type: Article

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