Radiation hardness perspectives for the design of analog detector readout circuits in the 0.18-μm CMOS generation

IEEE Transactions on Nuclear Science

Volumn 49 I, Issue 6, 2002, Pages 2902-2909

  Manghisoni, Massimo ^a   Ratti, Lodovico ^b   Re, Valerio ^b   Speziali, Valeria ^c  

^a UNIVERSITY OF BERGAMO   (Italy)

^b INFN SEZIONE DI PAVIA   (Italy)

^c UNIVERSITY OF PAVIA   (Italy)

Author keywords

Deep submicron; Front end electronics; Ionizing radiation; MOSFET; Noise

Indexed keywords

CMOS INTEGRATED CIRCUITS; HIGH ENERGY PHYSICS; IONIZING RADIATION; IRRADIATION; MOSFET DEVICES; RADIATION DETECTORS; READOUT SYSTEMS;

READOUT CIRCUITS;

RADIATION HARDENING;

EID: 0036952546     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2002.805413     Document Type: Conference Paper

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