In0.75Ga0.25As channel layers with record mobility exceeding 12,000 cm2/Vs for use in high-κ dielectric NMOSFETs

Solid-State Electronics

Volumn 50, Issue 7-8, 2006, Pages 1175-1177

  Droopad, Ravi ^a   Rajagopalan, Karthik ^a   Abrokwah, Jonathan ^a   Canonico, Michael ^a   Passlack, Matthias ^a  

^a FREESCALE SEMICONDUCTOR INC   (United States)

Author keywords

Charge carrier mobility; Compound semiconductor; High dielectrics; MOSFETs

Indexed keywords

EID: 33747157624     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2006.05.017     Document Type: Letter

References (9)

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