Anomalous temperature dependence of the electrical resistivity in In0.17Ga0.83N

Solid State Communications

Volumn 149, Issue 7-8, 2009, Pages 337-340

  Yildiz, A ^a   Lisesivdin, S B ^b   Kasap, M ^b   Bosi, M ^c  

^a AHI EVRAN UNIVERSITY   (Turkey)

^b GAZI UNIVERSITY   (Turkey)

^c CNR   (Italy)

Author keywords

E. InGaN; F. Electronic transport

Indexed keywords

ALLOYS; CARRIER CONCENTRATION; CRYSTAL GROWTH; ELECTRIC CONDUCTIVITY; ELECTRIC RESISTANCE; ELECTRON-ELECTRON INTERACTIONS; GALLIUM ALLOYS; GALVANOMAGNETIC EFFECTS; HALL EFFECT; INDIUM; MAGNETIC FIELD EFFECTS; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTOR MATERIALS;

ANOMALOUS RESISTIVITIES; ANOMALOUS TEMPERATURE DEPENDENCES; E. INGAN; ELECTRICAL RESISTIVITIES; F. ELECTRONIC TRANSPORT; HIGH TEMPERATURES; LOW TEMPERATURES; MAGNETO RESISTIVITIES; SEMICONDUCTOR SYSTEMS; SEMICONDUCTOR TRANSITIONS; TEMPERATURE COEFFICIENT OF RESISTIVITIES; TEMPERATURE DEPENDENTS; TEMPERATURE RANGES; WEAK LOCALIZATIONS;

SEMICONDUCTING INDIUM;

EID: 58149479331     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2008.11.026     Document Type: Article

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