Electrical transport in p-GaN, n-InN and n-InGaN

Solid-State Electronics

Volumn 39, Issue 9, 1996, Pages 1289-1294

  Geerts, Wim ^a   Mackenzie, J D ^a   Abernathy, C R ^a   Pearton, S J ^a   Schmiedel, Thomas ^b  

^a University of Florida   (United States)

^b FLORIDA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTIVITY; ELECTRIC FIELD EFFECTS; ELECTRIC VARIABLES MEASUREMENT; HALL EFFECT; MAGNETORESISTANCE; MOLECULAR BEAM EPITAXY; OHMIC CONTACTS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; TEMPERATURE MEASUREMENT; THERMAL EFFECTS;

CARBON RELATED ACCEPTORS; HALL MEASUREMENTS; METALLIC CONDUCTION; SHALLOW DONORS;

ELECTRON TRANSPORT PROPERTIES;

EID: 0030241015     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(96)00047-0     Document Type: Review

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