Stokes shift and band gap bowing in InxGa1-xN (0.060 ≤ x ≤ 0.105) grown by metalorganic vapour phase epitaxy

Acta Physica Polonica A

Volumn 113, Issue 2, 2008, Pages 731-739

  Yildiz, A ^a   Dagdelen, F ^b   Acar, S ^c   Lisesivdin, S B ^c   Kasap, M ^c   Aydogdu, Y ^b   Bosi, M ^d  

^a AHI EVRAN UNIVERSITY   (Turkey)

^b FIRAT UNIVERSITY   (Turkey)

^c GAZI UNIVERSITY   (Turkey)

^d CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; ENERGY GAP; EPITAXIAL LAYERS; HALL EFFECT; VAPOR PHASE EPITAXY;

METALORGANIC VAPOUR PHASE EPITAXY; STOKES SHIFT;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 39549104271     PISSN: 05874246     EISSN: None     Source Type: Journal    
DOI: 10.12693/APhysPolA.113.731     Document Type: Article

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