Magnetic-field-induced localization of electrons in InGaN/GaN multiple quantum wells

Applied Physics Letters

Volumn 83, Issue 13, 2003, Pages 2590-2592

  Arnaudov, B ^a   Paskova, T ^b   Valassiades, O ^c   Paskov, P P ^b   Evtimova, S ^a   Monemar, B ^b   Heuken, M ^d  

^a UNIVERSITY OF SOFIA   (Bulgaria)

^b LINKÖPING UNIVERSITY   (Sweden)

^c ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

^d AIXTRON AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TRANSPORT PROPERTIES; GALLIUM NITRIDE; MAGNETORESISTANCE; SEMICONDUCTING INDIUM COMPOUNDS;

MAGNETIC LOCALIZATION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0142089025     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1613999     Document Type: Article

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