The investigation of mole fraction dependence of mobility for In xGa1-xN alloy

Materials Science in Semiconductor Processing

Volumn 8, Issue 4, 2005, Pages 536-539

  Aydogu, S ^a   Ozbas, O ^a  

^a ESKISEHIR OSMANGAZI UNIVERSITY   (Turkey)

Author keywords

Alloy scattering mechanism; InxGa1 xN alloy; Low field; Phillip's electronegative difference theorem

Indexed keywords

ELECTRON MOBILITY; ELECTRON SCATTERING; FIELD EFFECT TRANSISTORS; HETEROJUNCTIONS; ITERATIVE METHODS; LATTICE CONSTANTS; PHONONS; SEMICONDUCTOR LASERS;

ALLOY SCATTERING MECHANISMS; ELECTRON SATURATION; INXGA1-XN ALLOYS; LOW FIELD; PHILLIP'S ELECTRONEGATIVE DIFFERENCE THEOREM;

INDIUM ALLOYS;

EID: 18144428776     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2004.12.004     Document Type: Article

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