Electron transport properties in lightly Si-doped InGaN films grown by metalorganic vapor phase epitaxy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 6 A, 2004, Pages 3356-3359

  Wang, Chengxin ^a,b   Maeda, Narihiko ^b   Tsubaki, Kotaro ^c   Kobayashi, Naoki ^a,d   Makimoto, Toshiki ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

^b NTT CORPORATION   (Japan)

^c TOYO UNIVERSITY   (Japan)

^d UNIVERSITY OF ELECTRO COMMUNICATIONS   (Japan)

Author keywords

Activation energy; Hall effect; InGaN; Mobility

Indexed keywords

ACTIVATION ENERGY; CARRIER CONCENTRATION; COMPUTER SIMULATION; ELECTRON TRANSPORT PROPERTIES; HALL EFFECT; LIGHT EMITTING DIODES; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; SILICON;

BANDGAP ENERGY; ELECTRON-BEAM EVAPORATION; PEAK SEPARATIONS; SCATTERING MECHANISM;

THIN FILMS;

EID: 4344591723     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.3356     Document Type: Article

References (24)

1. N. Maeda, T. Saitoh, K. Tsubaki, T. Nishida and N. Kobayashi: Jpn. J. Appl. Phys. 38 (1999) L987.
2. M. A. Khan, X. Hu, A. Tarakji, G. Simin, J. Yang, R. Gaska and M. S. Shur: Appl. Phys. Lett. 77 (2000) 1339.
3. S. T. Sheppard, K. Doverspike, W. L. Pribble, S. T. Allen, J. W Palmour, L. T. Kehias and T. J. Jenkins: IEEE Electron Device Lett. 20 (1999) 161.
4. G. Simin, X. Hu, A. Tarakji, J. Zhang, Z. Koudymov, S. Saygi, J. Yang, A. Khan, M. S. Shur and R. Gaska: Jpn. J. Appl. Phys. 40 (2001) L1142.
5. S. Nakamura, T. Mukai and M. Senoh: Jpn. J. Appl. Phys. 32 (1993) L16.
6. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoko and Y. Sugiraoto: Jpn. J. Appl. Phys. 35 (1996) L74.
7. T. Sugahara, M. Hao, T. Wang, D. Nakagawa, K. Nishino and S. Sakai: Jpn. J. Appl. Phys. 37 (1998) L1195.
8. T. T. Moon, D. J. Kin, J. S. Park, J. T. Oh, J. M. Lee, Y. W. O, H. S Kim and S. J. Park: Appl. Phys. Lett. 79 (2001) 599.
9. N. A. EI-Mastry, E. L. Finer, S. X. Liu and S. M. Bedair: Appl. Phys. Lett. 72 (1998) 40.
10. K. Kumakura, T. Makimoto and N. Kobayashi: J. Appl. Phys. 93 (2003) 3370.
11. W. Geerts, J. D. Mackenzie, C. R. Abernathy, S. J. Pearton and T. Schmiedel: Solid State Electron. 39 (1996) 1289.
12. M. Shimizu, Y. Kawaguchi, K. Hiramatsu and N. Sawaki: Jpn. J. Appl. Phys. 36 (1997) 3381.
13. L. Görgens, O. Ambacher, M. Stutzmann, C. Miskys, F. Scholz and J. Off: Appl. Phys. Lett. 76 (2000) 577.
14. Y. Nanishi, Y. Saito and T. Yamaguchi: Jpn. J. Appl. Phys. 42 (2003) 2549.
15. K. Seeger: Semiconductor Physics: An Introduction (Springer-Verlag, 1991) 5th ed.
16. I. Vurgaftman, J. R. Meyer and L. R. Ram-mohan: J. Appl. Phys. 89 (2001) 5815.
17. P. Hacke, A. Maekawa, N. Koide, K. Hiramatsu and N. Sawaki: Jpn. J. Appl. Phys. 33 (1994) 6443.
18. W. J. Moore, J. A. Freitas Jr., S. K. Lee, S. S. Park and J. Y. Han: Phys. Rev. B 65 (2002) 081201.
19. H. Fritzsche: Phys. Rev. 99 (1955) 406.
20. E. L. Piner, M. K. Behbehani, N. A. EI-Mastry, J. C. Roberts, F. G. McIntosh and S. M. Bedair: Appl. Phys. Lett. 71 (1997) 40.
21. I. Ho and G. B. Stringfellow: Appl. Phys. Lett. 69 (1996) 2701.
22. S. Pereira, M. R. Correia, E. Pereira, K. P. O'Donnell, E. Alves, A. D. Sequeira and N. Franco: Appl. Phys. Lett. 80 (2002) 3913.
23. D. C. Look and J. R. Sizelove: Phys. Rev. Lett. 82 (1999) 1237.
24. M. Balkanski and R. F. Wallis: Semiconductor Physics and Applications (Oxford Press, 2000).