Temperature-dependent galvanomagnetic measurements on doped InSb and InAs grown by liquid encapsulated czochralski

Chinese Physics Letters

Volumn 22, Issue 5, 2005, Pages 1218-1221

  Kasap, M ^a   Acar, S ^a   Ozcelik S ^a   Karadeniz, S ^b   Tugluoglu N ^b  

^a GAZI UNIVERSITY   (Turkey)

^b Ankara Nuclear Research and Training Center   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANTIMONY COMPOUNDS; CARRIER CONCENTRATION; ENERGY GAP; HALL MOBILITY; IMPURITIES; INDIUM ANTIMONIDES; INDIUM ARSENIDE; NARROW BAND GAP SEMICONDUCTORS; TELLURIUM COMPOUNDS;

ACTIVATION ENERGY E; CZOCHRALSKI TECHNIQUE; ENERGY; GALVANOMAGNETIC MEASUREMENTS; HALL EFFECT MEASUREMENT; IMPURITY LEVEL; LIQUID ENCAPSULATED CZOCHRALSKI; MAGNETIC-FIELD; S-DOPED; TEMPERATURE DEPENDENT;

III-V SEMICONDUCTORS;

EID: 24144485799     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/22/5/054     Document Type: Article

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