GaN/AlN quantum dots for single qubit emitters

Journal of Physics Condensed Matter

Volumn 20, Issue 45, 2008, Pages

  Winkelnkemper, M ^a   Seguin, R ^a   Rodt, S ^a   Hoffmann, A ^a   Bimberg, D ^a  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; COMMUNICATION SYSTEMS; ELECTRIC FIELD EFFECTS; ELECTRONIC PROPERTIES; GROUND STATE; OPTICAL WAVEGUIDES; PHOTONS; POLARIZATION; QUANTUM ELECTRONICS;

BAND THEORIES; BASAL PLANES; CONFINEMENT POTENTIALS; GAN/ALN QUANTUM DOTS; LINEAR POLARIZATIONS; OPTICAL INTERBAND TRANSITIONS; POLARIZATION PROPERTIES; POLARIZED PHOTONS; QUANTUM COMMUNICATION SYSTEMS; SINGLE QUBIT; STATE TRANSITIONS; STRAIN ANISOTROPIES; UNIAXIAL STRESSES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 58149354532     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/20/45/454211     Document Type: Article

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