Combining GW calculations with exact-exchange density-functional theory: An analysis of valence-band photoemission for compound semiconductors

New Journal of Physics

Volumn 7, Issue , 2005, Pages

  Rinke, Patrick ^a   Qteish, Abdallah ^a,b   Neugebauer, Jörg ^a,c,d   Freysoldt, Christoph ^a   Scheffler, Matthias ^a  

^a FRITZ HABER INSTITUT DER MAX PLANCK GESELLSCHAFT   (Germany)

^b YARMOUK UNIVERSITY   (Jordan)

^c UNIVERSITY OF PADERBORN   (Germany)

^d MAX PLANCK INSTITUT FÜR EISENFORSCHUNG GMBH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DENSITY-FUNCTIONAL THEORY; GW CALCULATIONS; QUASI-PARTICLE ENERGY CALCULATIONS; VALENCE BANDS;

APPROXIMATION THEORY; BAND STRUCTURE; CADMIUM SULFIDE; ELECTRON ENERGY LEVELS; ELECTRONIC STRUCTURE; ION EXCHANGE; NITRIDES; OPTIMIZATION; PERTURBATION TECHNIQUES; POSITIVE IONS; SEMICONDUCTOR MATERIALS; ZINC OXIDE;

PHOTOEMISSION;

EID: 21344438863     PISSN: 13672630     EISSN: 13672630     Source Type: Journal    
DOI: 10.1088/1367-2630/7/1/126     Document Type: Article

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