Effect of uniaxial stress on the polarization of light emitted from GaN AlN quantum dots grown on Si(111)

Physical Review B - Condensed Matter and Materials Physics

Volumn 77, Issue 15, 2008, Pages

  Moshe, O ^a   Rich, D H ^a   Damilano, B ^b   Massies, J ^b  

^a BEN GURION UNIVERSITY OF THE NEGEV   (Israel)

^b CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 42549168825     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.77.155322     Document Type: Article

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