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Physical Review B - Condensed Matter and Materials Physics

Volumn 65, Issue 19, 2002, Pages 1953151-19531523

Fine structure of neutral and charged excitons in self-assembled In(Ga)As/(Al) GaAs quantum dots

(14) Bayer, M a Ortner, G a Stern, O a Kuther, A a Gorbunov, A A a Forchel, A a Hawrylak, P b Fafard, S b Hinzer, K b Reinecke, T L c Walck, S N c Reithmaier, J P a Klopf, F a Schafer F a

a UNIVERSITY OF WÜRZBURG (Germany)

b NATIONAL RESEARCH COUNCIL CANADA (Canada)

c NAVAL RESEARCH LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC DERIVATIVE; GALLIUM;

ARTICLE; GEOMETRY; MAGNETIC FIELD; MATHEMATICAL ANALYSIS; PHOTOLUMINESCENCE; POLARIZATION; QUANTUM MECHANICS; SEMICONDUCTOR; SPECTROSCOPY; STRUCTURE ANALYSIS;

EID: 84988751828 PISSN: 01631829 EISSN: None Source Type: Journal
DOI: 10.1103/PhysRevB.65.195315 Document Type: Article

Times cited : (1112)

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