The mechanism of electrical annihilation of conductive paths and charge trapping in silicon-rich oxides

Nanotechnology

Volumn 20, Issue 4, 2009, Pages

  Morales Sanchez A ^a,b   Barreto, J ^a   Dominguez C ^a   Aceves, M ^b   Luna Lopez J A ^c  

^a INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

^b INSTITUTO NACIONAL DE ASTROFÍSICA   (Mexico)

^c BENEMÉRITA UNIVERSIDAD AUTÓNOMA DE PUEBLA   (Mexico)

Author keywords

[No Author keywords available]

Indexed keywords

AGGLOMERATION; CAPACITANCE; CHARGE TRAPPING; CONDUCTIVE FILMS; ELECTRIC FIELD EFFECTS; ELECTRIC FIELDS; ELECTRIC PROPERTIES; HEAT CONDUCTION; MOS CAPACITORS; MOSFET DEVICES; OXIDE FILMS; SEMICONDUCTING SILICON COMPOUNDS;

CAPACITANCE REDUCTIONS; CONDUCTION MECHANISMS; CONDUCTION STATES; CONDUCTIVE PATHS; CURRENT REDUCTIONS; ELECTRICAL PROPERTIES; ELECTRICAL STRESSES; HIGH CURRENTS; HIGH ELECTRIC FIELDS; POSITIVE VOLTAGES; SEMI-CONDUCTORS; TRAP ASSISTED TUNNELLING;

SEMICONDUCTING SILICON;

METAL OXIDE; NANOPARTICLE; SILICON;

ARTICLE; DESTRUCTION; ELECTRIC ACTIVITY; ELECTRIC CAPACITANCE; ELECTRIC FIELD; ELECTRIC POTENTIAL; FILM; PRIORITY JOURNAL; SEMICONDUCTOR;

EID: 58149269248     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/20/4/045201     Document Type: Article

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